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Title: High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

Polyvinyl alcohol (PVA) and anodized Al{sub 2}O{sub 3} layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO{sub 2} surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μ{sub EF}) value of 1.11 cm{sup 2}/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.
Authors:
;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
  2. Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
  3. (India)
Publication Date:
OSTI Identifier:
22251826
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 11; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CARRIER MOBILITY; COBALT COMPLEXES; DEPOSITION; DIELECTRIC MATERIALS; FABRICATION; FIELD EFFECT TRANSISTORS; LAYERS; SILICA; SILICON OXIDES