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Title: Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

In this study, n-ZnO thin films were electrochemically deposited on p-GaAs:Zn substrates. The XRD results of ZnO thin films deposited on p-GaAs:Zn substrates at potentials varied from −0.9 V to −1.2 V show a strong c-axis (002) orientation and homogeneity. The current-voltage characteristics exhibit rectification, proving a low turn-on voltage and an ideality factor of 4.71. The n-ZnO/p-GaAs heterostructures show blue-white electroluminescence (EL) emission, which is composed of broad emission bands. In addition to these broad peaks, stimulated emission also appear on the top of the spectra due to the multiple reflections from the mirror like surfaces of ZnO-ZnO and ZnO-GaAs interfaces. Besides, three broad photoluminescence (PL) emission peaks have also been observed peaking at respectively around 3.36 eV, 3.28 eV and 3.07 eV generally attributed to the near bandedge emission, the residual donor level and deep level emission due to the localized defects, respectively.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum (Turkey)
  2. Department of Chemistry, Faculty of Sciences, Atatürk University, 25240 Erzurum (Turkey)
Publication Date:
OSTI Identifier:
22251775
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 12; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; ELECTRIC POTENTIAL; ELECTRODEPOSITION; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; SPECTRA; STIMULATED EMISSION; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES