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Title: Upward ferroelectric self-poling in (001) oriented PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} epitaxial films with compressive strain

Upward self-poling phenomenon was observed in PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} ferroelectric films which were grown on (001) SrTiO{sub 3} substrate with either p-type La{sub 0.7}Sr{sub 0.3}MnO{sub 3} or n-type SrRuO{sub 3} buffered layer, or on n-type (001) Nb-SrTiO{sub 3} substrate. Both upward self-poling and epitaxial strain are strong in the super-thin PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} epitaxial films, while they become weak and finally disappear in thick epitaxial films or thin epitaxial films with high-density oxygen vacancies. Besides, both of them disappear in PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} polycrystalline films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. Therefore, the main origin of upward self-poling is epitaxial strain rather than p-n/Schottky junction or charged vacancies in PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} epitaxial films here.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)
  2. Department of Materials Sciences and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22251771
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 12; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DENSITY; EPITAXY; FERROELECTRIC MATERIALS; FILMS; POLYCRYSTALS; SILICON OXIDES; STRAINS; STRONTIUM TITANATES; SUBSTRATES; TITANIUM OXIDES