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Title: Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,Nā€‰ā€™-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed inmore » the simulated characteristics, where the critical V{sub G} above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge.« less
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Department of Organic and Polymeric Materials, Tokyo Institute of Technology, O-okayama, Tokyo 152-8552 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22251750
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 10; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CHARGE STATES; COMPUTERIZED SIMULATION; DENSITY; DISTRIBUTION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; NAPHTHALENE; TEMPERATURE DEPENDENCE