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Title: Spin transport in benzofurane bithiophene based organic spin valves

In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlO{sub x} buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlO{sub x} buffer layer.
Authors:
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  1. CNRS, LAAS, 7 avenue du Colonel Roche, F-31400 Toulouse (France)
  2. (France)
  3. Université de Toulouse (France)
  4. MOLTECH-Anjou, UMR CNRS 6200, Université d’Angers, 2 Bd Lavoisier 49045 ANGERS Cedex (France)
Publication Date:
OSTI Identifier:
22251675
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 1; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONTAMINATION; ELECTRODES; HYSTERESIS; LAYERS; MAGNETORESISTANCE; OXYGEN; SPIN