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Title: Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects

100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ∼ 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.
Authors:
; ; ; ;  [1] ;  [2]
  1. School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan)
  2. Toyota Technological Institute, Nagoya 468-8511 (Japan)
Publication Date:
OSTI Identifier:
22251593
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 1; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; FABRICATION; LAYERS; NANOSTRUCTURES; OXIDATION; PHOTOLUMINESCENCE; PLASMA; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SELECTION RULES; SILICON; SIMULATION; STRAINS; SUBSTRATES; SURFACE TREATMENTS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION