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Title: Epitaxial growth of γ-Al{sub 2}O{sub 3} on Ti{sub 2}AlC(0001) by reactive high-power impulse magnetron sputtering

Al{sub 2}O{sub 3} was deposited by reactive high-power impulse magnetron sputtering at 600 °C onto pre-deposited Ti{sub 2}AlC(0001) thin films on α-Al{sub 2}O{sub 3}(0001) substrates. The Al{sub 2}O{sub 3} was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al{sub 2}O{sub 3}(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of γ-Al{sub 2}O{sub 3} on Ti{sub 2}AlC(0001) open prospects for growth of crystalline alumina as protective coatings on Ti{sub 2}AlC and related nanolaminated materials. The crystallographic orientation relationships are γ-Al{sub 2}O{sub 3}(111)//Ti{sub 2}AlC(0001) (out-of-plane) and γ- Al {sub 2}O{sub 3}(22{sup ¯}0)// Ti {sub 2} AlC (112{sup ¯}0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 °C resulted in partial decomposition of the Ti{sub 2}AlC by depletion of Al and diffusion into and through the γ-Al{sub 2}O{sub 3} layer.
Authors:
; ; ; ;  [1]
  1. Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22251577
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 1; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DECOMPOSITION; DEPOSITS; ELECTRON DIFFRACTION; EPITAXY; MAGNETRONS; PROTECTIVE COATINGS; SPUTTERING; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY