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Title: Time-resolved ultraviolet photoluminescence of ZnO/ZnGa{sub 2}O{sub 4} composite layer

The ultraviolet photoluminescence of ZnO/ZnGa{sub 2}O{sub 4} composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D{sup 0}X emission is easily saturated than the DAP emission from ZnO/ZnGa{sub 2}O{sub 4} composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa{sub 2}O{sub 4} composite layer.
Authors:
; ;  [1] ; ; ; ;  [2] ;  [3]
  1. Faculty of Material Science and Engineering, Xi'an University of Technology, Xi'an 710048 (China)
  2. Department of Applied physics, Waseda University, Tokyo 169-8555 (Japan)
  3. Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561 (Japan)
Publication Date:
OSTI Identifier:
22251568
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EXCITATION; GALLIUM; LAYERS; OXIDATION; PHOTOLUMINESCENCE; ZINC OXIDES; ZINC SULFIDES