Time-resolved ultraviolet photoluminescence of ZnO/ZnGa{sub 2}O{sub 4} composite layer

Journal Article · Sat Feb 15 00:00:00 EST 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4864750· OSTI ID:22251568

Yang, Qing; Zhou, Xiaohong; Liang, Shuhua ^[1]; Nukui, Takao; Saeki, Yu; Izumi, Sotaro; Tackeuchi, Atsushi ^[2]; Tatsuoka, Hirokazu ^[3]

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1. Faculty of Material Science and Engineering, Xi'an University of Technology, Xi'an 710048 (China)
2. Department of Applied physics, Waseda University, Tokyo 169-8555 (Japan)
3. Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561 (Japan)

The ultraviolet photoluminescence of ZnO/ZnGa{sub 2}O{sub 4} composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D{sup 0}X emission is easily saturated than the DAP emission from ZnO/ZnGa{sub 2}O{sub 4} composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa{sub 2}O{sub 4} composite layer.

• OSTI ID: 22251568
• Journal Information: AIP Advances, Vol. 4, Issue 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXCITATION
GALLIUM
LAYERS
OXIDATION
PHOTOLUMINESCENCE
ZINC OXIDES
ZINC SULFIDES