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Title: Theoretical study of intraband optical transitions in conduction band of dot-in-a-well system

We study numerically absorption optical spectra of n-doped InAs/In{sub 015}Ga{sub 085}As/GaAs quantum dot-in-a-well systems. The absorption spectra are mainly determined by the size of a quantum dot and have weak dependence on the thickness of quantum well and position of the dot in a well. The dot-in-a-well system is sensitive to both in-plane and out-of-plane polarizations of the incident light with much stronger absorption intensities for the in-plane-polarized light. The absorption spectrum of in-plane-polarized light has also a multi-peak structure with two or three peaks of comparable intensities, while the absorption spectrum of out-of-plane polarized light has a single well-pronounced peak.
Authors:
;  [1]
  1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30302 USA. (Georgia)
Publication Date:
OSTI Identifier:
22251231
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ABSORPTION SPECTRA; DOPED MATERIALS; GALLIUM ARSENIDES; INDIUM ARSENIDES; PEAKS; POLARIZATION; QUANTUM DOTS; QUANTUM WELLS; THICKNESS