skip to main content

SciTech ConnectSciTech Connect

Title: Resistive switching properties of Ce and Mn co-doped BiFeO{sub 3} thin films for nonvolatile memory application

The Ce and Mn co-doped BiFeO{sub 3} (BCFMO) thin films were synthesized on Pt/Ti/SiO{sub 2}/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large R{sub OFF}/R{sub ON} ratio (>80), long retention time (>10{sup 5} s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan, 411105 (China)
  2. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan 411105 (China)
Publication Date:
OSTI Identifier:
22250877
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 12; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EMISSION; EQUIPMENT; LEAKAGE CURRENT; SILICON OXIDES; SOL-GEL PROCESS; SPACE CHARGE; SUBSTRATES; THIN FILMS