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Title: Electrical transport properties of Si-doped hexagonal boron nitride epilayers

The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm{sup 2}/V·s and concentration of n ∼ 1 × 10{sup 16} cm{sup −3}. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.
Authors:
; ; ; ;  [1]
  1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409 (United States)
Publication Date:
OSTI Identifier:
22250732
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 12; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRON MOBILITY; ENERGY LEVELS; HALL EFFECT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE