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Title: Energy levels, oscillator strengths, and radiative rates for Si-like Zn XVII, Ga XVIII, Ge XIX, and As XX

The energy levels, oscillator strengths, line strengths, and transition probabilities for transitions among the terms belonging to the 3s{sup 2}3p{sup 2}, 3s3p{sup 3}, 3s{sup 2}3p3d, 3s{sup 2}3p4s, 3s{sup 2}3p4p and 3s{sup 2}3p4d configurations of silicon-like ions (Zn XVII, Ga XVIII, Ge XIX, and As XX) have been calculated using the configuration-interaction code CIV3. The calculations have been carried out in the intermediate coupling scheme using the Breit–Pauli Hamiltonian. The present calculations have been compared with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement with both experimental and theoretical data. Lifetimes of the excited levels have also been calculated. -- Highlights: •We have calculated the fine-structure energy levels of Si-like Zn, Ga, Ge and As. •The calculations are performed using the configuration interaction method (CIV3). •We have calculated the oscillator strengths, line strengths and transition rates. •The wavelengths of the transitions are listed in this article. •We also have made comparisons between our data and other calculations.
Authors:
 [1] ; ;  [2]
  1. Physics Department, Faculty of Science, Al-Azhar University, Assuit (Egypt)
  2. Laboratory of Lasers and New Materials, Physics Department, Faculty of Science, Cairo University, Giza (Egypt)
Publication Date:
OSTI Identifier:
22237230
Resource Type:
Journal Article
Resource Relation:
Journal Name: Atomic Data and Nuclear Data Tables; Journal Volume: 100; Journal Issue: 1; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; COMPARATIVE EVALUATIONS; CONFIGURATION INTERACTION; EXCITED STATES; FINE STRUCTURE; HAMILTONIANS; INTERMEDIATE COUPLING; IONS; LIFETIME; OSCILLATOR STRENGTHS; PROBABILITY; SILICON; WAVELENGTHS