A device adaptive inflow boundary condition for Wigner equations of quantum transport
- Department of Applied Mathematics, Beijing Institute of Technology, Beijing 100081 (China)
- HEDPS and CAPT, LMAM and School of Mathematical Sciences, Peking University, Beijing 100871 (China)
- Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223-0001 (United States)
In this paper, an improved inflow boundary condition is proposed for Wigner equations in simulating a resonant tunneling diode (RTD), which takes into consideration the band structure of the device. The original Frensley inflow boundary condition prescribes the Wigner distribution function at the device boundary to be the semi-classical Fermi–Dirac distribution for free electrons in the device contacts without considering the effect of the quantum interaction inside the quantum device. The proposed device adaptive inflow boundary condition includes this effect by assigning the Wigner distribution to the value obtained from the Wigner transform of wave functions inside the device at zero external bias voltage, thus including the dominant effect on the electron distribution in the contacts due to the device internal band energy profile. Numerical results on computing the electron density inside the RTD under various incident waves and non-zero bias conditions show much improvement by the new boundary condition over the traditional Frensley inflow boundary condition.
- OSTI ID:
- 22230863
- Journal Information:
- Journal of Computational Physics, Vol. 258; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9991
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET
Study of the Wigner function at the device boundaries in one-dimensional single- and double-barrier structures