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Title: Simulation of ultra-relativistic electrons and positrons channeling in crystals with MBN EXPLORER

A newly developed code, implemented as a part of the MBN EXPLORER package (Solov'yov et al., 2012; (http://www.mbnexplorer.com/), 2012) [1,2] to simulate trajectories of an ultra-relativistic projectile in a crystalline medium, is presented. The motion of a projectile is treated classically by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. The probabilistic element is introduced by a random choice of transverse coordinates and velocities of the projectile at the crystal entrance as well as by accounting for the random positions of the atoms due to thermal vibrations. The simulated trajectories are used for numerical analysis of the emitted radiation. Initial approbation and verification of the code have been carried out by simulating the trajectories and calculating the radiation emitted by ε=6.7 GeV and ε=855 MeV electrons and positrons in oriented Si(110) crystal and in amorphous silicon. The calculated spectra are compared with the experimental data and with predictions of the Bethe–Heitler theory for the amorphous environment.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [3] ;  [5] ;  [3] ;  [1] ;  [2]
  1. Virtual Institute on Nano Films (VINF), Rue Colonel Bourg 127, 1140 Evere, Brussels (Belgium)
  2. (Germany)
  3. Frankfurt Institute for Advanced Studies, Goethe University, Ruth-Moufang-Str. 1, 60438 Frankfurt am Main (Germany)
  4. (United States)
  5. (Russian Federation)
Publication Date:
OSTI Identifier:
22230818
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Computational Physics; Journal Volume: 252; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTALS; ELECTRONS; EQUATIONS OF MOTION; MOLECULAR DYNAMICS METHOD; NUMERICAL ANALYSIS; POSITRON CHANNELING; POSITRONS; PROBABILISTIC ESTIMATION; PROJECTILES; RELATIVISTIC RANGE; SILICON; SIMULATION; TRAJECTORIES