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Title: Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices

Molecular beam epitaxy (MBE) is a versatile ultrahigh vacuum technique for growing multiple epitaxial layers of semiconductor crystals with high precision. The extreme control of the MBE technique over composition variation, interface sharpness, impurity doping profiles, and epitaxial layer thickness to the atomic level makes it possible to demonstrate a wide variety of novel semiconductor structures. Since its invention nearly 40 years ago, the MBE technique has evolved from a laboratory apparatus for exploring new materials and novel devices to a favored tool for the mass production of III–V high-speed devices. This paper will review some of the past developments in this technology and propose an outlook of future developments.
Authors:
 [1]
  1. Department of Electrical Engineering, National Tsing Hua University, 101 Kuang Fu Road, Section 2, Hsinchu, Taiwan 30013 (China)
Publication Date:
OSTI Identifier:
22224152
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 5; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ACCURACY; CONTROL; CRYSTALS; HETEROJUNCTIONS; IMPURITIES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; REVIEWS; SEMICONDUCTOR MATERIALS; THICKNESS