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Title: Characterization and photoluminescence of Co-doped SiC films

Co-doped SiC films are fabricated on Si (100) substrates by radio frequency magnetron sputtering, and the crystal structure, composition, element valences, local structure, and photoluminescence of the films are studied. Crystal structure analysis identifies the film structure as 3C-SiC and shows that the Co dopant atoms form CoSi secondary phase compounds in the films. The composition and element valence analysis show that the Co dopant atoms substituting for C sites in the SiC lattice exist in the form of Co{sup 2+} ions, and that C clusters are present in the films, which increase in amount with increasing Co dopant concentration. The analysis of local structure reveals that Co clusters, CoO and Co{sub 3}O{sub 4}, are not present in the films, and CoSi secondary phase compounds exist. All of the films show a violet photoluminescence peak located at 413 nm, which becomes stronger with increased Co dopant concentration and annealing temperature, and is found to originate from the C clusters.
Authors:
 [1] ; ; ; ; ;  [2] ;  [3] ;  [4]
  1. School of Material Science and Engineering, Tianjin University, Tianjin 300072, China and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin 300384 (China)
  2. Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China and School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China)
  3. School of Material Science and Engineering, Tianjin University, Tianjin 300072 (China)
  4. School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384, China, Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China, and School of Material Science and Engineering, Tianjin University, Tianjin 300072 (China)
Publication Date:
OSTI Identifier:
22224114
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 6; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; COBALT; COBALT IONS; COBALT OXIDES; CONCENTRATION RATIO; CRYSTAL STRUCTURE; DOPED MATERIALS; MAGNETRONS; PHOTOLUMINESCENCE; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; THIN FILMS