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Title: Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy

The carbonization of an antimony-terminated Si (111) surface in a solid source molecular beam epitaxy system is presented. Reflection high-energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy are used to characterize samples grown with and without antimony termination. It is shown that the antimony-terminated surface promotes the formation of thin, smooth and continuous SiC films at a relatively low temperature of 800 °C.
Authors:
;  [1] ;  [2]
  1. Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)
  2. U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
Publication Date:
OSTI Identifier:
22224113
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 6; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; ATOMIC FORCE MICROSCOPY; CARBONIZATION; ELECTRON DIFFRACTION; FILMS; MOLECULAR BEAM EPITAXY; REFLECTION; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; SURFACES; TEMPERATURE RANGE 0065-0273 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY