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Title: Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al{sub 2}O{sub 3} on GaSb(100)

In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al{sub 2}O{sub 3} interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.
Authors:
 [1] ; ; ; ;  [2] ; ; ;  [3]
  1. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  3. College of Nanoscale Science and Engineering, University at Albany–SUNY, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22224098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 6; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DESORPTION; ELECTRON DIFFRACTION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; IONS; LAYERS; MOLECULAR BEAM EPITAXY; MONOCHROMATIC RADIATION; PROTECTIVE COATINGS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY