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Title: Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.
Authors:
; ; ; ; ; ; ;  [1] ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [2] ;  [1] ;  [5] ;  [5]
  1. Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States)
  2. (United States)
  3. International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China)
  4. The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States)
  5. (China)
Publication Date:
OSTI Identifier:
22220491
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 7; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY ALLOYS; ANTIMONY TELLURIDES; ATOMIC FORCE MICROSCOPY; BISMUTH ALLOYS; BISMUTH TELLURIDES; ELECTRON DIFFRACTION; FILMS; GALLIUM ARSENIDES; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TELLURIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION