Heteroepitaxial Ge-on-Si by DC magnetron sputtering
Abstract
The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.
- Authors:
-
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)
- Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)
- Publication Date:
- OSTI Identifier:
- 22220490
- Resource Type:
- Journal Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 7; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CONTAMINATION; DEPOSITION; DISLOCATIONS; DOPED MATERIALS; ELLIPSOMETRY; EPITAXY; FILMS; GERMANIUM ALLOYS; INTERFACES; MAGNETRONS; NANOSTRUCTURES; SILICON ALLOYS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY
Citation Formats
Steglich, Martin, Schrempel, Frank, Füchsel, Kevin, Kley, Ernst-Bernhard, Patzig, Christian, Berthold, Lutz, Höche, Thomas, Tünnermann, Andreas, and Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena. Heteroepitaxial Ge-on-Si by DC magnetron sputtering. United States: N. p., 2013.
Web. doi:10.1063/1.4813841.
Steglich, Martin, Schrempel, Frank, Füchsel, Kevin, Kley, Ernst-Bernhard, Patzig, Christian, Berthold, Lutz, Höche, Thomas, Tünnermann, Andreas, & Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena. Heteroepitaxial Ge-on-Si by DC magnetron sputtering. United States. https://doi.org/10.1063/1.4813841
Steglich, Martin, Schrempel, Frank, Füchsel, Kevin, Kley, Ernst-Bernhard, Patzig, Christian, Berthold, Lutz, Höche, Thomas, Tünnermann, Andreas, and Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena. 2013.
"Heteroepitaxial Ge-on-Si by DC magnetron sputtering". United States. https://doi.org/10.1063/1.4813841.
@article{osti_22220490,
title = {Heteroepitaxial Ge-on-Si by DC magnetron sputtering},
author = {Steglich, Martin and Schrempel, Frank and Füchsel, Kevin and Kley, Ernst-Bernhard and Patzig, Christian and Berthold, Lutz and Höche, Thomas and Tünnermann, Andreas and Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena},
abstractNote = {The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.},
doi = {10.1063/1.4813841},
url = {https://www.osti.gov/biblio/22220490},
journal = {AIP Advances},
issn = {2158-3226},
number = 7,
volume = 3,
place = {United States},
year = {Mon Jul 15 00:00:00 EDT 2013},
month = {Mon Jul 15 00:00:00 EDT 2013}
}
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