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Title: Heteroepitaxial Ge-on-Si by DC magnetron sputtering

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)
  2. Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22220490
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 7; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CONTAMINATION; DEPOSITION; DISLOCATIONS; DOPED MATERIALS; ELLIPSOMETRY; EPITAXY; FILMS; GERMANIUM ALLOYS; INTERFACES; MAGNETRONS; NANOSTRUCTURES; SILICON ALLOYS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY