Heteroepitaxial Ge-on-Si by DC magnetron sputtering

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4813841· OSTI ID:22220490

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard ^[1]; Patzig, Christian; Berthold, Lutz; Höche, Thomas ^[2]; Tünnermann, Andreas ^[1]

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1. Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)
2. Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

• OSTI ID: 22220490
• Journal Information: AIP Advances, Vol. 3, Issue 7; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CONTAMINATION
DEPOSITION
DISLOCATIONS
DOPED MATERIALS
ELLIPSOMETRY
EPITAXY
FILMS
GERMANIUM ALLOYS
INTERFACES
MAGNETRONS
NANOSTRUCTURES
SILICON ALLOYS
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY