Near-infrared photoactive Cu{sub 2}ZnSnS{sub 4} thin films by co-sputtering

Journal Article · Thu Aug 15 00:00:00 EDT 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4820377· OSTI ID:22220460

Banavoth, Murali; Dias, Sandra; Krupanidhi, S. B. ^[1]

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1. Materials Research Centre, Indian Institute of Science, Bangalore- 560012 (India)

The thin films of Cu{sub 2}ZnSnS{sub 4} (CZTS) were grown by co-sputtering further the structural, optical and electrical properties were analyzed and confirmed the CZTS phase formation. The photo response of CZTS in near IR photodectection has been demonstrated. The detector response was measured employing both the IR lamp and IR laser illuminations. The calculated growth and decay constants were 130 m sec and 700 m sec followed by the slower components upon lamp illumination. The external quantum efficiency of 15%, responsivity of 13 AW{sup −1} makes CZTS a suitable candidate for the IR photodectection.

• OSTI ID: 22220460
• Journal Information: AIP Advances, Vol. 3, Issue 8; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COPPER COMPOUNDS
DEPOSITION
ELECTRICAL PROPERTIES
PHOTODETECTORS
QUANTUM EFFICIENCY
SPUTTERING
THIN FILMS
TIN COMPOUNDS
ZINC COMPOUNDS