Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy

Journal Article · Sun Sep 15 00:00:00 EDT 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4821278· OSTI ID:22220419

Kim, Suhyun; Kim, Joong Jung; Jung, Younheum; Lee, Kyungwoo; Byun, Gwangsun; Hwang, KyoungHwan; Lee, Sunyoung; Lee, Kyupil ^[1]

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1. Memory Analysis Science and Engineering Group, Samsung Electronics, San 16, Hwasung City, Gyeonggi-Do 445-701 (Korea, Republic of)

Accurate measurement of the strain field in the channels of transistor arrays is critical for strain engineering in modern electronic devices. We applied atomic-resolution high-angle annular dark-field scanning transmission electron microscopy to quantitative measurement of the strain field in transistor arrays. The quantitative strain profile over 20 transistors was obtained with high reliability and a precision of 0.1%. The strain field was found to form homogeneously in the channels of the transistor arrays. Furthermore, strain relaxation due to the thin foil effect was quantitatively investigated for thicknesses of 35 to 275 nm.

• OSTI ID: 22220419
• Journal Information: AIP Advances, Vol. 3, Issue 9; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCURACY
ELECTRONIC EQUIPMENT
SCANNING ELECTRON MICROSCOPY
STRAINS
TRANSISTORS
TRANSMISSION ELECTRON MICROSCOPY