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Title: Modified energetics and growth kinetics on H-terminated GaAs (110)

Abstract

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

Authors:
 [1]; ; ;  [1]; ; ;  [2]
  1. Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain)
  2. Institut für Physik, Montanuniversität Leoben, Franz Josef St., 18A-8700 Leoben (Austria)
Publication Date:
OSTI Identifier:
22220374
Resource Type:
Journal Article
Journal Name:
Journal of Chemical Physics
Additional Journal Information:
Journal Volume: 139; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-9606
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; ARSENIC; CHEMISORPTION; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; MOLECULAR BEAMS; SURFACE ENERGY; SURFACES

Citation Formats

Galiana, B., Departamento de Física, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Madrid, Benedicto, M., Díez-Merino, L., Tejedor, P., Lorbek, S., Hlawacek, G., and Teichert, C. Modified energetics and growth kinetics on H-terminated GaAs (110). United States: N. p., 2013. Web. doi:10.1063/1.4826452.
Galiana, B., Departamento de Física, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Madrid, Benedicto, M., Díez-Merino, L., Tejedor, P., Lorbek, S., Hlawacek, G., & Teichert, C. Modified energetics and growth kinetics on H-terminated GaAs (110). United States. https://doi.org/10.1063/1.4826452
Galiana, B., Departamento de Física, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Madrid, Benedicto, M., Díez-Merino, L., Tejedor, P., Lorbek, S., Hlawacek, G., and Teichert, C. 2013. "Modified energetics and growth kinetics on H-terminated GaAs (110)". United States. https://doi.org/10.1063/1.4826452.
@article{osti_22220374,
title = {Modified energetics and growth kinetics on H-terminated GaAs (110)},
author = {Galiana, B. and Departamento de Física, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Madrid and Benedicto, M. and Díez-Merino, L. and Tejedor, P. and Lorbek, S. and Hlawacek, G. and Teichert, C.},
abstractNote = {Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.},
doi = {10.1063/1.4826452},
url = {https://www.osti.gov/biblio/22220374}, journal = {Journal of Chemical Physics},
issn = {0021-9606},
number = 16,
volume = 139,
place = {United States},
year = {Mon Oct 28 00:00:00 EDT 2013},
month = {Mon Oct 28 00:00:00 EDT 2013}
}