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Title: Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

We derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion regions. We use an exponential surface potential approximation in solving the quantization energy levels and derive the function of density of states in 2D to 3D transition region by applying uncertainty principle and Schrödinger equation in k-space. The simulation results show that our approximation method and theory of density of states solve the two major problems of previous researches: the non-negligible error caused by the linear potential approximation and the inconsistency of density of states and carrier distribution in 2D to 3D transition region.
Authors:
;  [1]
  1. Graduate Institute of Electronics Engineering/ Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)
Publication Date:
OSTI Identifier:
22220364
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 10; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APPROXIMATIONS; BUILDUP; DENSITY; DISTRIBUTION; ELECTRON GAS; ENERGY LEVELS; LAYERS; QUANTIZATION; SCHROEDINGER EQUATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SURFACE POTENTIAL; UNCERTAINTY PRINCIPLE