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Title: An (ultra) high-vacuum compatible sputter source for oxide thin film growth

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.4821148· OSTI ID:22220354
; ; ; ;  [1]
  1. Institute for Physical Chemistry, University of Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)

A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

OSTI ID:
22220354
Journal Information:
Review of Scientific Instruments, Vol. 84, Issue 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
Country of Publication:
United States
Language:
English

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