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Title: Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells

We report enhanced solar cell performance using high-density InAs quantum dots. The high-density quantum dot was grown by antimony mediated molecular beam epitaxy. In-plane quantum dot density over 1 × 10{sup 11} cm{sup −2} was achieved by applying a few monolayers of antimony on the GaAs surface prior to quantum dot growth. The formation of defective large clusters was reduced by optimization of the growth temperature and InAs coverage. Comparing with a standard quantum dot solar cell without the incorporation of antimony, the high-density quantum dot solar cell demonstrates a distinct improvement in short-circuit current from 7.4 mA/cm{sup 2} to 8.3 mA/cm{sup 2}.
Authors:
; ; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom)
  2. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904 (Japan)
  3. Defence Science and Technology Laboratory, Portsdown West, Portsdown Hill Road, Fareham Hants PO17 6AD (United Kingdom)
Publication Date:
OSTI Identifier:
22218308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ANTIMONY; DENSITY; ELECTRIC CURRENTS; ELECTRICAL FAULTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PERFORMANCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SOLAR CELLS