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Title: Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)
  2. Institut Néel, CNRS-Université Joseph Fourier, 25 av. des Martyrs, 38042 Grenoble (France)
  3. Groupe d'Etude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 av. des Etats-Unis, 78035 Versailles Cedex (France)
Publication Date:
OSTI Identifier:
22218304
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; DIAMONDS; DOPED MATERIALS; EPITAXY; LAYERS; MASS SPECTRA; MASS SPECTROSCOPY; PHOSPHORUS IONS; SIGNALS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY