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Title: Impact of proton irradiation on deep level states in n-GaN

Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10{sup 13} cm{sup −2}. The proton irradiation introduced two traps with activation energies of E{sub C} - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E{sub C} - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence.
Authors:
; ; ;  [1] ; ; ; ;  [2] ; ;  [3]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)
  3. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Publication Date:
OSTI Identifier:
22218303
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CAPACITANCE; CARRIERS; DAMAGE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; EV RANGE; FUNCTIONS; GALLIUM NITRIDES; IRRADIATION; MEV RANGE; PROTONS; SEMICONDUCTOR MATERIALS; TRAPS