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Title: Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

Single crystal epitaxial Ge{sub 1−x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1−x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 °C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1−x}Sn{sub x} alloys versus the composition of Sn have been determined.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)
  2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)
Publication Date:
OSTI Identifier:
22218302
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHANNELING; GERMANIUM ALLOYS; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TIN; TIN ALLOYS; X-RAY DIFFRACTION