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Title: The effect of electron induced hydrogenation of graphene on its electrical transport properties

We report a deterioration of the electrical transport properties of a graphene field effect transistor due to energetic electron irradiation on a stack of Poly Methyl Methacrylate (PMMA) on graphene (PMMA/graphene bilayer). Prior to electron irradiation, we observed that the PMMA layer on graphene does not deteriorate the carrier transport of graphene but improves its electrical properties instead. As a result of the electron irradiation on the PMMA/graphene bilayer, the Raman ā€œDā€ band appears after removal of PMMA. We argue that the degradation of the transport behavior originates from the binding of hydrogen generated during the PMMA backbone secession process.
Authors:
 [1] ;  [1] ;  [2]
  1. Department of Physics and Astronomy, Texas A and M University, College Station, Texas 77843 (United States)
  2. (Japan)
Publication Date:
OSTI Identifier:
22218299
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIERS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; GRAPHENE; HYDROGEN; HYDROGENATION; IRRADIATION; LAYERS; METHACRYLIC ACID ESTERS; PMMA; RAMAN SPECTRA; REMOVAL; TAIL ELECTRONS