The effect of electron induced hydrogenation of graphene on its electrical transport properties

Journal Article · Mon Jul 22 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4816475· OSTI ID:22218299

Woo, Sung Oh ^[1]; Teizer, Winfried ^[1]

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1. Department of Physics and Astronomy, Texas A and M University, College Station, Texas 77843 (United States)

We report a deterioration of the electrical transport properties of a graphene field effect transistor due to energetic electron irradiation on a stack of Poly Methyl Methacrylate (PMMA) on graphene (PMMA/graphene bilayer). Prior to electron irradiation, we observed that the PMMA layer on graphene does not deteriorate the carrier transport of graphene but improves its electrical properties instead. As a result of the electron irradiation on the PMMA/graphene bilayer, the Raman “D” band appears after removal of PMMA. We argue that the degradation of the transport behavior originates from the binding of hydrogen generated during the PMMA backbone secession process.

• OSTI ID: 22218299
• Journal Information: Applied Physics Letters, Vol. 103, Issue 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIERS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
FIELD EFFECT TRANSISTORS
GRAPHENE
HYDROGEN
HYDROGENATION
IRRADIATION
LAYERS
METHACRYLIC ACID ESTERS
PMMA
RAMAN SPECTRA
REMOVAL
TAIL ELECTRONS