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Title: Terahertz quantum cascade lasers based on quaternary AlInGaAs barriers

Terahertz quantum cascade lasers incorporating lattice-matched quaternary AlInGaAs barriers grown by molecular beam epitaxy on InP substrate are reported. Four quantum well active region devices exhibited lasing at 3.8 THz with threshold current densities as low as 74 A/cm{sup 2} at 10 K. From optical characterization and a doping study of the active region, an upper state lifetime of 8 ps, as well as a long transport time across the active region of 68 ps and a ratio of free carrier loss to gain cross sections of 4.6%, is reported. A maximum operating temperature of 130 K was achieved for a device with a conduction band discontinuity of 0.14 eV.
Authors:
; ; ;  [1]
  1. Institute for Quantum Electronics, ETH Zurich, Zurich 8093 (Switzerland)
Publication Date:
OSTI Identifier:
22218298
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CURRENT DENSITY; DENSITY; DIFFUSION BARRIERS; EQUIPMENT; EV RANGE; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LANTHANUM SELENIDES; LASERS; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THRESHOLD CURRENT