skip to main content

SciTech ConnectSciTech Connect

Title: Extreme ultraviolet induced defects on few-layer graphene

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.
Authors:
; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands)
  2. ASML, De Run 6501, 5504DR Veldhoven (Netherlands)
  3. (Netherlands)
Publication Date:
OSTI Identifier:
22218260
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL BONDS; DENSITY; DOSES; EXTREME ULTRAVIOLET RADIATION; GRAPHENE; HYDROGEN; LAYERS; OXIDATION; OXIDES; PHOTONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY