Extreme ultraviolet induced defects on few-layer graphene

Journal Article · Sun Jul 28 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4817082· OSTI ID:22218260

Gao, A.; Zoethout, E.; Lee, C. J. ^[1]; Rizo, P. J.; Scaccabarozzi, L.; Banine, V. ^[2]; Bijkerk, F. ^[1]

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1. FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands)
2. ASML, De Run 6501, 5504DR Veldhoven (Netherlands)

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

• OSTI ID: 22218260
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL BONDS
DENSITY
DOSES
EXTREME ULTRAVIOLET RADIATION
GRAPHENE
HYDROGEN
LAYERS
OXIDATION
OXIDES
PHOTONS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY