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Title: Magnetic properties of Mn{sub 3}O{sub 4} film under compressive stress grown on MgAl{sub 2}O{sub 4} (001) by molecular beam epitaxy

High quality single-crystalline Mn{sub 3}O{sub 4} thin films were grown on MgAl{sub 2}O{sub 4} (001) substrates by plasma-assisted molecular beam epitaxy. It is found that the films are compressed in the (001) plane and elongated in the perpendicular direction via in-situ reflection high-energy electron diffraction and ex-situ X-ray diffraction, which is confirmed by frequency hardening of relevant Raman bands. Different from the bulk, the epitaxial film with a thickness of 65 nm shows more obvious magnetic anisotropy and higher magnetic phase transition temperatures (T{sub N} = 50 K, T{sub 1} = 40.5 K, and T{sub 2} = 36 K) than that of the bulk (T{sub N} = 42 K, T{sub 1} = 39 K, and T{sub 2} = 33 K). The variation of magnetic properties could be attributed to the changes of interplay among spin, orbital, and lattice degrees of freedom owing to the residual strain in the epitaxial film.
Authors:
; ; ; ;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22218248
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 5; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; ELECTRON DIFFRACTION; ELONGATION; MAGNETIC PROPERTIES; MANGANESE OXIDES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PLASMA; RAMAN SPECTRA; THIN FILMS; TRANSITION TEMPERATURE; X-RAY DIFFRACTION