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Title: The formation mechanisms and optical characteristics of GaSb quantum rings

The growth mechanisms and optical characteristics of GaSb quantum rings (QRs) are investigated. Although As-for-Sb exchange is the mechanism responsible for the dot-to-ring transition, significant height difference between GaSb quantum dots (QDs) and QRs in a dot/ring mixture sample suggests that the dot-to-ring transition is not a spontaneous procedure. Instead, it is a rapid transition procedure as long as it initiates. A model is established to explain this phenomenon. Larger ring inner diameters and heights of the sample with longer post Sb soaking time suggest that As-for-Sb exchange takes places in both vertical and lateral directions. The decreasing ring densities, enlarged ring inner/outer diameters and eventually flat GaSb surfaces observed with increasing growth temperatures are resulted from enhanced adatom migration and As-for-Sb exchange with increasing growth temperatures.
Authors:
;  [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [4]
  1. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China)
  2. College of Photonics, National Chiao-Tung University, Tainan 711, Taiwan (China)
  3. Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)
  4. (China)
Publication Date:
OSTI Identifier:
22218245
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 5; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM ANTIMONIDES; LAYERS; MIXTURES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SURFACES