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Title: Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation

The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned “comb structures” are deposited on dielectric films and exposed to synchrotron radiation in the range of 8–25 eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limiting charging damage of dielectrics by depleting the plasma-deposited charge.
Authors:
; ; ;  [1] ;  [2]
  1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)
Publication Date:
OSTI Identifier:
22218239
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; DIELECTRIC MATERIALS; EV RANGE; FAR ULTRAVIOLET RADIATION; GLASS; PHOTOCONDUCTIVITY; PLASMA; SILICON COMPOUNDS; SURFACES; SYNCHROTRON RADIATION; THIN FILMS