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Title: Evolution of structural and magnetic properties of amorphous CoFeB film with thermal annealing

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4817882· OSTI ID:22218238
; ;  [1];  [2];  [3]
  1. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore-452017 (India)
  2. European Synchrotron Radiation Facility, 6 rue Jules Horowitz, F-38043 Grenoble (France)
  3. Institut Laue-Langevin, BP 156, 38042 Grenoble Cedex 9 (France)

Evolution of structural and magnetic properties of amorphous Co{sub 68}Fe{sub 14}B{sub 18} thin film with thermal annealing has been studied. Initially, the film exhibits a structural relaxation as evidenced by annihilation of excess free volume and an increase in topological short range order. Annealing at 473 K results in precipitation of primary phase followed by formation of boride phase at a still higher temperature of 598 K. Iron preferentially precipitates out in the primary phase, resulting in the formation of bcc Co{sub 58}Fe{sub 41}. This suggests an affinity of Co towards B. Such affinity between Co and B is evidenced even in the as-deposited film, using hard x-ray photoelectron spectroscopy (HAXPES) measurements. As-deposited film exhibits an in-plane uniaxial magnetic anisotropy which disappears at a temperature well beyond crystallization temperature, suggesting that the origin of anisotropy is mainly a chemical short range order in the system. Variation in the coercivity with thermal annealing can be understood in terms of random anisotropy model. Precise measurement of Fe self-diffusion using neutron reflectivity shows that diffusion length associated with annihilation of excess free volume in the film is about 0.5 nm. This agrees with the length scale of structural fluctuations in amorphous alloys. Secondary ion mass spectrometry measurements show that thermal annealing results in depletion of B in the region of the interface with the substrate, with associated faster Fe diffusion in this region. This faster diffusion of Fe may be a possible cause of preferential crystallization of the film in the interfacial region as seen in some earlier studies.

OSTI ID:
22218238
Journal Information:
Journal of Applied Physics, Vol. 114, Issue 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English