skip to main content

Title: Effects of Ga ion-beam irradiation on monolayer graphene

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.
Authors:
; ; ; ;  [1] ;  [1] ;  [2]
  1. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22218230
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; COMPRESSION STRENGTH; ELECTRIC CONDUCTIVITY; EQUIPMENT; FABRICATION; FIELD EFFECT TRANSISTORS; FULLERENES; GALLIUM IONS; GRAPHENE; ION BEAMS; IRRADIATION; NONLINEAR PROBLEMS; RAMAN EFFECT; RAMAN SPECTRA; RAMAN SPECTROSCOPY; RED SHIFT; SCANNING ELECTRON MICROSCOPY; STRAINS; VARIATIONS