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Title: Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.
Authors:
; ; ;  [1] ; ; ; ;  [2] ;  [1] ;  [3]
  1. Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072 (Australia)
  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083 (China)
  3. (Australia)
Publication Date:
OSTI Identifier:
22218228
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; CATALYSIS; CATALYSTS; CONCENTRATION RATIO; FABRICATION; GOLD; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHASE DIAGRAMS; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY