skip to main content

SciTech ConnectSciTech Connect

Title: Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [3]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  2. (United States)
  3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)
Publication Date:
OSTI Identifier:
22218227
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANISOTROPY; FLUCTUATIONS; GALLIUM; GALLIUM ARSENIDES; ION BEAMS; IRRADIATION; NANOSTRUCTURES; RANDOMNESS; SPUTTERING; STOICHIOMETRY; SURFACES; VELOCITY