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Title: Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.
Authors:
; ; ;  [1] ; ;  [2]
  1. Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India)
  2. University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)
Publication Date:
OSTI Identifier:
22218226
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ANTIMONY; ANTIMONY IONS; CONCENTRATION RATIO; DENSITY; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ION BEAMS; NITROGEN COMPLEXES; P-N JUNCTIONS; SAPPHIRE; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES