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Title: Determination of thickness and composition of high-k dielectrics using high-energy electrons

We demonstrate the application of high-energy elastic electron backscattering to the analysis of thin (2–20 nm) HfO{sub 2} overlayers on oxidized Si substrates. The film composition and thickness are determined directly from elastic scattering peaks characteristic of each element. The stoichiometry of the films is determined with an accuracy of 5%–10%. The experimental results are corroborated by medium energy ions scattering and Rutherford backscattering spectrometry measurements, and clearly demonstrate the applicability of the technique for thin-film analysis. Significantly, the presented technique opens new possibilities for nm depth profiling with high spatial resolution in scanning electron microscopes.
Authors:
 [1] ;  [2] ;  [3] ; ;  [1] ;  [1] ;  [4] ;  [5]
  1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)
  2. (Brazil)
  3. Atomic and Molecular Physics Laboratory, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)
  4. (Australia)
  5. (Bangladesh)
Publication Date:
OSTI Identifier:
22218225
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACCURACY; BACKSCATTERING; DEPTH; DIELECTRIC MATERIALS; ELASTIC SCATTERING; HAFNIUM OXIDES; LAYERS; PEAKS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPATIAL RESOLUTION; STOICHIOMETRY; SUBSTRATES; THICKNESS; THIN FILMS