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Title: Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires

Straight, axial InAs nanowire with multiple segments of Ga{sub x}In{sub 1−x}As was grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveals the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the Ga{sub x}In{sub 1−x}As/InAs interfaces and a higher Ga concentration for the early grown Ga{sub x}In{sub 1−x}As segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, Butenandstr 5-13(E), 81377 München (Germany)
  2. Nano-Science Center and Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark)
  3. INM-Leibniz Institute for New Materials, 66123 Saarbrücken (Germany)
Publication Date:
OSTI Identifier:
22218216
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM FLUORIDES; INTERFACES; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; TERNARY ALLOY SYSTEMS; X RADIATION; X-RAY SPECTROSCOPY