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Title: Laterally self-ordered silicon-germanium islands with optimized confinement properties

We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band structure simulations. A comparison between these band structure simulations and photoluminescence spectroscopy shows that such islands have a significant three dimensional spatial electron-hole wave function overlap. In addition, we show that this spatial wave function overlap overcompensates a weak wave function spreading in k-space.
Authors:
;  [1] ;  [2] ; ; ;  [1] ; ;  [3] ;  [4] ;  [1] ;  [2] ;  [5] ;  [6]
  1. Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany)
  2. (Germany)
  3. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg (Germany)
  4. Department of Chemistry, Ludwig Maximilian Universität München, D-81377 Munich (Germany)
  5. Institute for Advanced Study, Technische Universität München, D-85748 Garching (Germany)
  6. (Japan)
Publication Date:
OSTI Identifier:
22218215
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; FABRICATION; GERMANIUM; GERMANIUM ALLOYS; HOLES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SILICON ALLOYS; SIMULATION; SPECTROSCOPY; WAVE FUNCTIONS