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Title: Indium diffusion through high-k dielectrics in high-k/InP stacks

Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  3. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22218211
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DIELECTRIC MATERIALS; HAFNIUM OXIDES; INDIUM PHOSPHIDES; SCATTERING; SURFACES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY