Indium diffusion through high-k dielectrics in high-k/InP stacks

Journal Article · Mon Aug 05 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4817932· OSTI ID:22218211

Dong, H.; Cabrera, W.; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J. ^[1]; Galatage, R. V. ^[2]; Zhernokletov, D. ^[3]; Wallace, R. M. ^[1]

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1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
2. Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
3. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

• OSTI ID: 22218211
• Journal Information: Applied Physics Letters, Vol. 103, Issue 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
DIELECTRIC MATERIALS
HAFNIUM OXIDES
INDIUM PHOSPHIDES
SCATTERING
SURFACES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY