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Title: 64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 μW corresponding to an optical power-to-THz power conversion efficiency of up to 2 × 10{sup −3}.
Authors:
; ; ; ; ;  [1] ; ; ;  [2]
  1. Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Einsteinufer 37, 10587 Berlin (Germany)
  2. Department of Physics, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)
Publication Date:
OSTI Identifier:
22218210
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANTENNAS; EFFICIENCY; EMISSION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; MOBILITY; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PULSES; SEMICONDUCTOR MATERIALS; SPECTRA; SPECTROMETERS; TRAPPING