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Title: Determination of gain in AlGaN cladding free nitride laser diodes

The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup −1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.
Authors:
; ;  [1] ; ; ; ;  [1] ;  [2]
  1. Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland)
  2. (Poland)
Publication Date:
OSTI Identifier:
22218209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 6; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; AUGMENTATION; CLADDING; CURRENT DENSITY; GAIN; GALLIUM COMPOUNDS; LOSSES; MOLECULAR BEAM EPITAXY; OPTICAL MODES; PLASMA; PROCESSING; QUANTUM WELLS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SPECTRA; THRESHOLD CURRENT; WAVELENGTHS